Abstract
It has been well known that the dangling bond ESR spectrum of hydrogenated amorphous silicon films deposited on quartz substrates has an asymmetric lineshape which is nearly Gaussian for the high magnetic field side, while nearly Lorentzian for the low magnetic field side. A new spectrum with g = 2.0010 .0005 and the linewidth Δ H = 3 G is resolved in this Gaussian line by adjusting the amplitude of magnetic field modulation and is identified as the Si-E′ center. The presence of this center in the near-surface of the quartz substrates is mainly responsible for the asymmetric lineshape.
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