Abstract
Magnon drag effect in antiferromagnetic- and ferromagnetic semiconductors is calculated by solving the coupled Boltzmann equation for the magnon and carrier systems, where the carriers are specified by the mobile carriers in a broad band with an isotropic effective mass m*. Discussions are limited to the temperature range T « T N or T c . Magnons and carriers are coupled via the sdinteraction. If the Rayleigh scattering due to the point defects or impurities, plays a dominant role in limiting the relaxation rate of magnon except the sd-scattering, the magnon drag thermopower [Display omitted] has the following temperature dependence: [Display omitted] The first two qualitatively explain the observed behavior of the thermoelectric power in MnTe.
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