Contribution to the Theory of Magnetoelectric Effect in Magnetic Semiconductors

Abstract

A generation of a d.c. electric field at ferromagnetic resonance or the magnetoelectric effect in magnetic semiconductors is studied theoretically in the whole magnon wave vector space. The magnetoelectric effect in the classical regime kl < 1 and contributions of different electron-magnon interactions to the magnon drag effect in the quantum regime kl > 1 are calculated. All the calculated static electric fields are compared with experimental results. At low-microwave power levels the non-linear electrodynamic interaction due to a mixing of the oscillating magnetization (k = 0) and the induced electric field seems to dominate the magnetoelectric effect. In some cases the classical drag effect may also be significant. At sufficiently high power levels the quantum mechanical magnon drag can make the largest contribution. It is shown that in the magnon drag effect the induced static electric field is proportional to the damping coefficient of magnons.