Abstract
We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-ฮผm-wide (Ga,Mn)As wires, oriented in [110] and [11ยฏ0] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at temperatures between 4.5 and 75 K. Depending on the orientation of the wire, the additional uniaxial anisotropy observed along the axis of the 1-ฮผm-wide samples either increased or decreased the total uniaxial anisotropy.
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