Abstract
We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov–de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012 cm−2, only the lowest subband in the quantum well is occupied.
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