Abstract
The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown Bi2Se3 nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important. In this work, all-around ZnO-encapsulated nanoribbons are investigated. Gate-dependent magnetotransport measurements show improved charge transport characteristics as reduced nanoribbon/substrate interface carrier densities compared to the values obtained for the as-grown nanoribbons on SiO2 substrates.
Highlights
Three‐dimensional topological insulators (3D‐TIs) are among the major materials in the class of topological materials. 3D‐TIs have attracted significant research interest due to their unusual surface properties
Free‐standing Bi2Se3 nanoribbons were grown on glass substrates using catalyst‐free physical vapor deposition (PVD)
ZnO‐encapsu‐ lated Bi2Se3 nanoribbons were transferred to the chips partially covered with thin flakes of hexagonal boron nitride (h‐BN)
Summary
Three‐dimensional topological insulators (3D‐TIs) are among the major materials in the class of topological materials. 3D‐TIs have attracted significant research interest due to their unusual surface properties. If proximitized with an s‐wave superconductor, superconductivity induced in the topological surface states is un‐ conventional and predicted to host Majorana fermions [4,5] The exploitation of these ex‐ otic surface properties is advantageous for a variety of applications, for example, in topo‐ logical quantum computing [6], spintronics [7,8], and in the development of new‐concept electronic devices [9]. The surface states of TIs are metallic while the bulk of the material, which is expected to be an insulator, is highly doped due to the formation of native defects [10] This aspect remains the main challenge in accessing the surface‐state charge transport, hampering progress towards the development of applications beyond funda‐ mental studies
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
