Abstract
We report a gate-voltage modulation on the weak anti-localization of individual topological insulator Bi2Se3 nanoribbons. The phase coherence length decreases with decreasing the carrier density of the surface states on the bottom surface of the Bi2Se3 nanoribbon as tuning the gate voltage from 0 to −100 V, indicating that the electron-electron interaction dominates the decoherence at low carrier density. Furthermore, we observe an abnormal conductance decline at positive gate voltage regime, which is ascribed to the capture of surface carriers by the trapping centers in the surface oxidation layer.
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