Abstract
The mobility and the sheet electron density of two-dimensional electron gas in AlSb∕InAs quantum well structures optimized for device applications were measured in the temperature range 4.2K<T<90K. A maximum electron mobility μ=3.24×105 was found at 4.2K at a sheet electron density n2D=1.1×1012cm−2. Measurements of the integral quantum Hall and Shubnikov-de Haas oscillations in the temperature range 0.07–9K were also carried out to obtain additional information on the characteristics of the two-dimensional electron gas. The electron effective mass m* and the effective electron g-factor g* were determined from these measurements and found to be, respectively, 0.032m0 and 14.6. The latter is in good agreement with the recent experimental data obtained from cyclotron resonance and titled magnetic-field experiments.
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