Abstract
The authors characterize the effective mass and phase coherence length for electrically induced two-dimensional hole gases in undoped GaSb/AlSb quantum wells.
Highlights
GaSb is a III-V compound semiconductor with a strong spin-orbit interaction
They lay the groundwork for realizing spin-based electronics based on the strong spin-orbit interaction in this promising system
The very different gate voltage ranges between the 8- and 25-nm-thick quantum well (QW) originate from the difference in the thickness of the capping layer and the trapping of charges in it
Summary
GaSb is a III-V compound semiconductor with a strong spin-orbit interaction. Recently, GaSb has been attracting attention as half of the predicted quantum spin Hall insulator InAs/GaSb double quantum well (QW), in which a 7- to 8-nm-thick GaSb QW is used to form a hybridization gap with the neighboring InAs QW [1,2,3,4,5,6,7]. The hole transport in GaSb is of technological importance for highperformance p-type field-effect transistors (FETs) utilizing high hole mobility at room temperature [8,9,10,11,12,13,14,15,16,17,18,19,20] and for realizing spin-based electronics utilizing the aforementioned strong spin-orbit interaction [21]. We have recently reported hole transport in a heavily doped 20-nm-thick GaSb QW and characterized the hole effective masses and phase coherence lengths [36]. We have gone a step further and characterized the effective mass m∗ and phase coherence length lφ for such electrically induced two-dimensional (2D) hole systems in 8- and 25-nmthick undoped GaSb QWs
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