Magnetotransport in lateral periodic potentials formed by surface-layer-induced modulation in InAs-AlSb quantum wells

Abstract

We report the realization of strong lateral superlattice potentials in not-intentionally doped InAs-AlSb quantum wells. By spatially alternating the surface layer between thin layers of InAs and GaSb, which shift the pinning position of the Fermi level at the surface, we induce a lateral density modulation of 4×1011 cm−2, equivalent to a potential modulation of 30 meV inside quantum wells 20 nm away from the surface. Both one- and two-dimensional lateral potentials were fabricated and studied by magnetotransport measurements. Strong commensurability oscillations are observed.