Abstract
The magnetic response of microdevices is significantly enhanced at structural resonance allowing for improved sensitivity and signal-to-noise ratio. Here, free-standing thin film CoFe bridge resonators have been fabricated and investigated. It is shown that the strong magnetic field dependence of the fundamental resonance frequency is a function of magnetic field orientation due to stress-induced anisotropy. These devices may offer a new approach for developing fully integrated resonant magnetic field sensing technology.
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