Abstract
After forming electric devices, a magnetostriction effect sometimes deteriorates the sensitivity of sensors such as read heads of hard disk devices, or the bit stability of memories such as magnetic random access memories through the inverse-magnetostriction phenomenon. We should, therefore, know the magnetostriction constant of magnetic films on the practical substrates. In this paper, I present a new method by detecting the changes in coercive force, Hc, with mechanically bending the substrates. This method uses the inverse-magnetostriction effect and I show the magnetostriction constant can be calculated from the gradient of the applied stress vs. Hc curves. With this method, I have successfully measured the magnetostriction constant of the GMR films fabricated on the practical substrates with a high sensitivity over 10-7. This method will be useful for the magnetic thin films with a large anisotropy field.
Highlights
In a data storage technology, high-sensitive reading head has been achieved by reducing the thickness of film
The trend of storage technology makes harder to measure !S because of not enough energy from a magnetic film to bend a substrate under an applied field
It is very important to consider the lattice elastic strain induced by the magnetostriction effect for fabricating the reading heads [2]
Summary
In a data storage technology, high-sensitive reading head has been achieved by reducing the thickness of film. It is very important to consider the lattice elastic strain induced by the magnetostriction effect for fabricating the reading heads [2] Such a development needs high-resolution, highrepeatable and easy-to-use equipment to measure !S. A new method for measuring !S of wafer-shaped sample fabricated on the practical substrate was proposed by applying mechanical loading and multipoint measurement of local deformation of a sample [3,4] The effectiveness of this proposed method was validated by the measurement using the developed equipment. It was confirmed that the resolution of the measurement of !S was very high In those days, magnetic thin films with a lager anisotropy field used for in-plane type random access memories or perpendicular oriented type ones have been developed.
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