Abstract
We report on the Shubnikov–de Haas oscillations in the longitudinal resistance of thin films of three-dimensional topological insulator Sb2Te3 grown by means of molecular beam epitaxy. The oscillations persist up to the temperatures of 30 K, and the measurements at various tilt angles reveal that they originate from a two-dimensional system. Using a top gate, we further study the change of oscillation amplitude and frequency, which in combination with the standard Hall measurements suggest the origin of oscillations to be at the interface between the film and the Si substrate.
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