Abstract
We present results for the resistivity of the two-dimensional spin-polarized electron gas as realized in GaN quantum wells at zero temperatures. A parallel magnetic field is used to create a spin-polarized electron gas. We discuss the density dependence of the magnetoresistance for impurity scattering and interface-roughness scattering. Finite width effects of the electron gas on the magnetoresistance are described.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
