Abstract
We report on the experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way we show that the photoluminescence is not coming from quantum dots in the quantum well but from the quantum well itself under the influence of an internal electric field induced by strain.
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