Magnetoresistance in the variable-range hopping conduction regime in diluted arrays of quantum dots with the filling factor 2 < η < 3

Abstract

Magnetoresistance mechanisms in an array of quantum dots with hopping conduction, which is determined by electronic states with the orbital angular momentum l = 1, and filling factor 2 < ν < 3 have been considered. The magnetoresistance mechanism associated with the existence of the nodal planes of the wavefunctions of such electrons has been analyzed in detail. The dependence of this mechanism on both the shape of quantum dots and the dimension of the array has been examined including the spin-orbit interaction and effects associated with the interference of tunneling paths. Also it has been shown that a change in the energy of the orbital motion of the electron with l = 1 in the magnetic field leads to an additional mechanism of positive magnetoresistance proportional to the square of the field.