Abstract
Submicron magnetic tunnel junctions exhibiting perpendicular magnetic anisotropy have been prepared by sputtering. They associate a hard and a soft electrode based on Co∕Pt multilayers, separated by an amorphous alumina barrier. The soft electrode is either free or exchange biased by an antiferromagnetic layer. The magnetoresistance ratio reaches 8% at room temperature after patterning junctions with diameter down to 200nm. The macroscopic magnetic properties were investigated by extraordinary Hall effect and conventional magnetometry measurements. The magnetic moments of both electrodes are out of plane. Two well-separated switching fields allow the realization of well-defined parallel and antiparallel configurations of the magnetizations.
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