Abstract
This paper reports the result of experimentally investigating the magnetoresistance effect in Ni–Fe films formed by ion beam sputtering (IBS). Although IBS-formed Ni–Fe film has a well-defined uniaxial magnetic anisotropy and high permeability, its magnetoresistance effect is smaller than that of film formed by radio-frequency (rf) sputtering. This small magnetoresistance effect was found to be caused by an increase in film resistivity rather than by a decrease in magnetoresistivity. The increase in resistivity cannot be explained merely by impurity concentration; it is also due to defects produced by Ar+ ion bombardment and the impingement of particles with relatively high energies. When the substrate temperature was higher than 220 °C, the resistivity became smaller as the substrate temperature was increased because of both having larger crystal grains and recovery of defects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
