Abstract
Electrical resistance of CdSe0.8Te0.2 thin films were found to be dependent on various film parameters such as substrate temperature, film thickness, deposition rate and post-deposition heat treatment in different environments. A decrease in film resistivity was observed for thicker films and for those heat treated in vacuum. Films deposited at higher substrate temperatures and faster rates showed an increase in film resistivity. A spectrum of activation energies was observed in the films which fell within either of the activation energies observed in CdSe or CdTe films. Films heated in an oxygen environment showed an increase in film resistivity with a different activation energy. Transmission electron microscopy (TEM) of the films showed an improvement in crystallinity with increasing film thickness and substrate temperature, and a reduction in crystallinity with increasing deposition rate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
