Abstract
Flexible electronics or hybrid electronics exhibit great potential for widespread applications in future wearable electronics. In this work, we fabricated flexible nanoscale MgO-barrier magnetic tunnel junctions (MTJs) using a transfer printing process. The magnetic transport measurements reveal that the fabricated devices possess excellent performance with a tunnel magnetoresistance ratio of ∼130% under different strained conditions. In addition, we also studied the spin-torque diode effect under different strained conditions and found that the resonant frequency and rectified voltage remain almost unchanged. These results demonstrate that the nanoscale MTJs have good strain endurance, which provides the feasibility to flexible spintronic storage and microwave applications.
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