Abstract
The type-II InAsSbP ellipsoidal quantum dots (QDs) are nucleated on InAs substrate from In-As-Sb-P quaternary melt-solution using Stranski–Krastanow growth mode. The structures under consideration were prepared in the form of photoconductive cells. Magnetospectroscopy is used to measure the QDs structure’s electric sheet resistance in magnetic field at lateral current flow. The magnetoresistance Aharonov–Bohm (MAB) oscillations with the period of δB ≈ 0.4 T are found. No temperature dependence is experimentally revealed for the period of MAB. It is shown the QDs size distribution strongly acts on the period of MAB oscillations. The values for both major and minor semiaxes of ellipsoidal QDs were theoretically calculated using an equation for the period of classical Aharonov-Bohm oscillations. Comparison of calculated and experimentally measured values shows that they are coincide with high accuracy. Additionally, the temperature dependant hysteresis on magnetoresistance curves is revealed.
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