Abstract
The paper concerns investigations of shallow centres in semi-insulating (SI) GaAs samples. A very sensitive measuring method — magnetophotoconductivity due to intra-shallow-donor transitions — was used. We report the behaviour of intra-impurity transitions as well as an additional structure in low magnetic fields for different far-infrared wavelengths (70.6 μm, 96.5 Am, 118.8 Am, 163 μm). The results are discussed in terms of a fluctuating potential from ionized centres in SI GaAs. The physical mechanism responsible for the low magnetic field structure is proposed.
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