Magnetophoretic Circuits Operating in a Tri-Axial Magnetic Field

Abstract

In electrical circuits, the electrons repel each other due to the electric forces. This repulsive force plays important roles, such as self-limiting the charge accumulation within the circuits. To achieve similar results, in the new version of the magnetophoretic circuits, a vertical bias magnetic field is superimposed on the rotating field. This vertical component biases the magnetic particles such that they repel each other. Also, by eliminating one of the energy wells rotating around the magnets, the vertical bias field eradicates the degeneracy in the general driving clock cycle. Similar to the circuits operating in the 2D field, conductors, bends, and diodes, operating in the tri-axial field are studied. In addition to the passive circuit elements, several types of magnetophoretic transistors capable of switching the trajectory of the magnetic particles in a tri-axial magnetic field are investigated. These transistors are categorized into two main groups of attractive and repulsive transistors. The magnetophoretic transistors operating in 2D and 3D magnetic fields require electrical gate currents of ~30 and ~50 mA, respectively. The effect of parameters including the particle size, the driving frequency, and the magnetic field strength in the case of 3D fields are shown not to be challenging.