Abstract
Magnetoquantum oscillations of the Hall coefficient R H were observed in Te-doped GaSb layers grown by molecular beam epitaxy. The free electron densities were in the low 10 16 cm −3 range or even slightly lower, thus achieving, for the first time in GaSb, the extreme quantum limit, where all the electrons occupy the spin-split 0 (+) Landau level (LL). Similarly to other known cases, the amplitude of the last maximum of R H could be explained as enhanced by the metal-to-insulator transition of the spin-down electron system in the n=0 LL. The occurrence of the last negative oscillation of R H below its classical value, called Hall dip, could be frustrated, in samples with sufficiently low carrier densities, by an incipient carrier freeze-out at donor impurities induced by the magnetic field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.