Abstract
We have carried out a photoluminescence study of an $n$-type modulation-doped ${\mathrm{Z}\mathrm{n}\mathrm{S}\mathrm{e}/\mathrm{Z}\mathrm{n}}_{0.825}{\mathrm{Cd}}_{0.14}{\mathrm{Mn}}_{0.035}\mathrm{S}\mathrm{e}/\mathrm{Z}\mathrm{n}\mathrm{S}\mathrm{e}$ single quantum well structure (electron areal density ${n}_{A}=1.6\ifmmode\times\else\texttimes\fi{}{10}^{12}{\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$) in magnetic fields up to 30 T. In the presence of a magnetic field, the broad emission band in the vicinity of the gap evolves into a series of discrete features. These are attributed to interband transitions of electrons occupying Landau levels to photogenerated holes. The Landau transitions associated with both electron spin states ${(m}_{j}=\ifmmode\pm\else\textpm\fi{}\frac{1}{2})$ are clearly resolved due to the large electron and hole $g$ factors exhibited by the magnetic wells. An analysis of the Landau-level occupation as a function of magnetic field yields the electron concentration.
Published Version
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