Abstract
Bulk inversion asymmetry (BIA) of III-V and II-VI semiconductor quantum wells is demonstrated by reflection experiments in magnetic field oriented in the structure plane. The linear in the magnetic field contribution to the reflection coefficients is measured at oblique incidence of $s$ and $p$ polarized light in vicinity of exciton resonances. We demonstrate that this contribution to the reflection is caused by magnetogyrotropy of quantum wells, i.e. by the terms in the optical response which are linear in both the magnetic field strength and light wavevector. Theory of magnetogyrotropic effects in light reflection is developed with account for linear in momentum BIA induced terms in the electron and hole effective Hamiltonians. Theoretical estimates agree with the experimental findings. We have found the electron BIA splitting constant in both GaAs and CdTe based quantum wells is about three times smaller than that for heavy holes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
