Abstract
The recently discovered ferroelectricity in thin films of doped hafnia has aroused much interest, because of the films' stable ferroelectric polarization at small thicknesses and compatibility with Si-based semiconductor technology. Through density-functional calculations of a model Ni/HfO${}_{2}$/Ni (001) heterostructure, this study predicts stable, sizable ferroelectric polarization in the ultrathin HfO${}_{2}$ layer, and a significant induced magnetoelectric effect at the Ni/HfO${}_{2}$ interfaces. These findings reveal the promising prospects of ferroelectric/ferromagnetic composite multiferroics based on hafnia for applications in microelectronics.
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