Abstract
The leakage current in ferroelectric thin films is one of the most pertinent issues for their application in microelectronics. We argue that the leakage current in ferroelectric films at low electric field can arise from interband tunneling as opposed to Fowler–Nordheim tunneling at high electric field. We substantiate our argument by showing the evolution of negative differential resistance (NDR) with decreasing film thickness in the I–V curves of lead zirconate titanate (PZT) films prepared under controlled conditions.
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