Abstract
Gd-implanted wurtzite GaN as a candidate for a ferromagnetic dilute magnetic semiconductor is investigated by time-resolved magneto-optical spectroscopy. We observe a strong increase of the electron spin lifetimes for increasing Gd doses, while the electron spin Larmor precession frequency is independent of the Gd concentration. These findings are well explained by carrier localization at defects and a negligible interaction with Gd ions. The data show that Gd-implanted GaN cannot be used for an electron spin aligner.
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