Abstract
AbstractMagnetization switching of a CoFe submicron structure was studied. A patterned stripe‐shaped film consisting of CoFe/Cu/Co multilayer was prepared. By fabricating two oxide nanowires on the top CoFe layer by a nano‐oxidation technique using an atomic force microscope (AFM), a rectangular isolated region of CoFe was obtained. The magnetization of the CoFe rectangle was successfully switched by applying a pulsed current of 100 mA with 1‐ms duration through this stripe film. This switching was reproducible and observed with a threshold current of around 90 mA. Copyright © 2008 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call