Magnetization of ultrathin (Ga,Mn)As layers

Abstract

Kerr rotation and superconducting quantum interference device magnetometry measurements were performed on ultrathin $({\mathrm{Ga}}_{0.95}{\mathrm{Mn}}_{0.05})\mathrm{As}$ layers. The thinner layers (below 250 \AA{}) exhibit magnetic properties different than those of thicker ones, associated with different microstructure, and some degree of inhomogeneity. The temperature dependence of the field-cooled magnetization of the layers is recorded after successive low temperature annealings. While the Curie temperature of the thicker layer (250 \AA{}) is nearly unchanged, the critical temperature of the thinner layers is enhanced by more than 23 K after two annealings. Secondary ion mass spectrometry experiments on similar layers show that Mn is displaced upon annealing. The results are discussed considering a possible segregation of substitutional and interstitial Mn atoms at the surface of the (Ga,Mn)As layers.