Magnetic two-dimensional field effect transistor

Abstract

We study experimentally low-temperature current-voltage characteristics of n-type GaAs/GaAlAs modulation doped quantum wells under the influence of an external magnetic field. In particular, we use samples additionally doped in the well with Be acceptors. As showed previously, negatively charged acceptor ions can localize conduction electrons by a joint effect of a quantum well and an external magnetic field. It is found that, in the acceptor-doped samples, the Hall electric field resulting from the presence of magnetic field plays the role of the gate voltage. At sufficiently high magnetic fields, the drain current has a constant value independent of the drain voltage. It is argued that the above phenomenon is due to the electron localization with the resulting decrease of conducting electron density in the crossed-field configuration. We propose to exploit the observed unusual behaviour as a device called “magnetic two-dimensional electron gas field effect transistor” operating at low temperatures.