Abstract
In the present work, we investigated the simultaneous effects of intense non-resonant laser and external magnetic fields on the electronic structure and the nonlinear optical properties (the light absorption, the refractive index and the group velocity) of GaAs/Al0.3Ga0.7As near-surface quantum well. The calculations were performed within the compact density-matrix formalism under the steady state conditions with the use of the effective mass approximation. The obtained results show that the electronic structure and, consequently, the optical properties are sensitive to the dressed well induced asymmetry and the effects of the magnetic field. By changing the intensities of the magnetic and laser fields, we can obtain the control of the group velocity, without the need for the growth of many different samples.
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