Abstract

Multifunctional and multiresponsive thin films are playing an increasing role in modern technology. This work reports a study on the magnetic properties of ZnO and Ag-doped ZnO semiconducting films prepared with a zigzag-like columnar architecture and their correlation with the processing conditions. The films were grown through Glancing Angle Deposition (GLAD) co-sputtering technique to improve the induced ferromagnetism at room temperature. Structural and morphological characterizations have been performed and correlated with the paramagnetic resonance measurements, which demonstrate the existence of vacancies in both as-cast and annealed films. The magnetic measurements reveal changes in the magnetic order of both ZnO and Ag-doped ZnO films with increasing temperature, showing an evolution from a paramagnetic (at low temperature) to a diamagnetic behavior (at room temperature). Further, the room temperature magnetic properties indicate a ferromagnetic order even for the un-doped ZnO film. The results open new perspectives for the development of multifunctional ZnO semiconductors, the GLAD co-sputtering technique enables the control of the magnetic response, even in the un-doped semiconductor materials.

Highlights

  • Ferromagnetic properties in semiconductors are an exciting field of research to integrate electrical and magnetic functionalities in nanostructured materials

  • ZnO and Ag-doped ZnO thin films were DC sputtered from a metallic zinc (Zn) target, using a custom-made vacuum chamber

  • Similar results are observed for the pure ZnO material [1,11,32]. These results indicate that the control of the columnar growth of the films is as efficient as to doping semiconductor materials with metals

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Summary

Introduction

Ferromagnetic properties in semiconductors are an exciting field of research to integrate electrical and magnetic functionalities in nanostructured materials. Different works have addressed the mechanisms responsible for the room temperature ferromagnetism (RTFM) in the so-called diluted magnetic semiconductors (DMS), where a semiconductor as ZnO is doped by ferromagnetic transition metal (Mn, Fe, Co, Ni) [1,2,3,4,5]. The segregation of metallic cluster [6] and double exchange [3,4] are some of the effects that can be responsible for the room temperature ferromagnetism (RTFM). Coey et al [5] proposed that the ferromagnetic exchange in DMS materials is related to bound magnetic polarons (BMPs) mediated with shallow donor electrons. Distinct authors related the RTFM properties with structural defects, in particular when metal dopants are employed [5,7]

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