Abstract
FeN films were RF diode sputter deposited and magnetic property variations with substrate temperature and film thickness were investigated. Coercivity of the films with thickness of 6,000 /spl Aring/ did not increase substantially up to initial substrate temperature of 160/spl deg/C, which corresponded to the maximum substrate temperature of 240/spl deg/C during deposition. Easy axis coercivity of single layer films peaked at the film thickness of 580 /spl Aring/ and hard axis coercivity did not vary noticeably down to 300 /spl Aring/ of film thickness. Multilayer films of total thickness of 6,000 /spl Aring/ showed minimum easy axis coercivity of 0.65 Oe at the layer thickness of 950 /spl Aring/ and hard axis coercivity variation with respect to the layer thickness, similar to that of single layer films.
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