Abstract
Polycrystalline (Fe 50Pt 50) 95X 5 (X=W or Ti) alloy thin films were prepared by DC magnetron sputtering on natural-oxidized silicon wafer substrates, then postannealed in vacuum at various temperatures. The film thickness was 10 nm. The effects of sputtering argon pressure, annealing temperature and doping element on the grain size and in-plane coercivity of the FePt thin film were investigated. We found that the addition of W or Ti all can reduce the grain size of the annealed film, but coercivity of the film was decreased. Maximum coercivity of all the doped films could reach about 8 kOe, which was obtained by annealing the film at 650°C for 15 min. The grain size was about 10 nm. These films may be a promising candidate for high-density magnetic recording media.
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