Abstract
Thin films with barium hexaferrite (BaM) layers on thermally oxidized silicon wafers were fabricated by water-based sol-gel method. Polycrystalline BaFe/sub 12/O/sub 19//SiO/sub 2//Si(100) thin films were characterized with Rutherford backscattering, X-ray diffraction, vibrating sample magnetometer, and atomic force microscope as well as Fourier transform infrared spectroscopy (FT-IR). The thin films were annealed at 600-900/spl deg/C in air for 2 hours. The pattern for the sample annealed at a temperature above 650/spl deg/C indexed well on the M-type hexagonal structure and no other phases were detectable. The films were composed of uniformly distributed hexagonal-type grains, with diameters between 400 and 600 /spl Aring/. Surface roughness of the films was between 20 and 40 /spl Aring/. The perpendicular coercivity H/sub C/spl perp// and in-plane one H/sub C/spl par// were 4766 Oe and 4380 Oe, respectively, at room temperature under an applied field of 10 kOe annealed at 650/spl deg/C for 2 hours.
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