Characterization of r.f. sputtered thin Mo, W and Si films as precursors to multilayer X-ray mirrors

Abstract

Single layers of Mo, W and Si thin films have been deposited by r.f. sputtering on float glass and c-Si substrates kept at room temperature. The films have been characterised by grazing incidence X-ray reflectometry (GIXR), X-ray transmission (XRT), Rutherford backscattering spectrometry (RBS), atomic force microscopy (AFM) and phase modulated spectroscopic ellipsometry (SE) studies. The thickness values obtained from the GIXR measurements have been used to calibrate the in situ thickness monitors. The surface roughness of the thin layers have also been determined from the GIXR measurements. The atomic mass density in the films have been obtained from the RBS measurements while X-ray absorption has been estimated from the XRT measurements. The surface morphology of the films has been investigated by the AFM micrographs. The Si thin films have also been characterized by the SE technique. The characterization of the samples by these complementary techniques have been very useful in optimizing the process parameters to obtain good quality layers as precursors to the fabrication of the multilayer X-ray mirrors based on Mo/Si and W/Si structures.