Abstract
The magnetic properties of single crystals of synthetic diamond and crystals of silicon carbide were studied. High-purity samples of diamonds synthesized with HPHT and CVD technologies were used. The crystals of silicon carbide were grown by sublimation and industrial technology. Along with samples with a natural isotopic composition, monoisotopic crystals of diamond (99.96% 12C and 99.96% 13C) and silicon carbide (99.993% of 28Si) were studied. On the basis of the data obtained, the diamagnetic susceptibility was determined and the concentration of paramagnetic centers and the content of the ferromagnetic component were evaluated. The results are discussed.
Highlights
One of the trends in solid-state electronics is the increasing research activity in the field of wide-gap semiconductors – silicon carbide and diamond
Nothing like a study of the magnetic properties of natural diamonds [1] was made for synthetic diamonds
The samples of synthetic diamond have been grown by high-pressure high-temperature process (HPHT) #1 and CVD method (Table 2)
Summary
One of the trends in solid-state electronics is the increasing research activity in the field of wide-gap semiconductors – silicon carbide and diamond. Magnetic properties of synthetic diamonds with modified isotopic composition have been not studied yet. (n = 1018 cm-3); 6H crystals #8 and #9 were irradiated with neutron dose about 2.2 1018 and crystal #7 is its unirradiated counterpart; samples #10 and #11 are 6H crystals with free carrier concentration of n ~ 1016 cm-3 and n ~ 1018 cm-3; samples #12 and #13 are 6H SiC crystals doped with Fe. The samples of synthetic diamond have been grown by high-pressure high-temperature process (HPHT) #1 and CVD method (samples #3 - #7) (Table 2).
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