Abstract
Mn +-implanted and annealed Si 1− x Ge x thin films grown on p-Si (100) substrates were formed with the goal of producing (Si 1− x Ge x ) 1− y Mn y with a high ferromagnetic transition temperature ( T c ) . The double-crystal X-ray rocking curves and transmission electron microscopy images showed that the Mn-implanted and annealed Si 1− x Ge x thin films were single crystalline. The magnetization curves as functions of the magnetic field clearly showed that ferromagnetism existed in the Mn + -implanted and annealed Si 1− x Ge x thin films, and the magnetization curves as functions of the temperature showed that the T c value was above 300 K. These results indicate that the formed (Si 1− x Ge x ) 1− y Mn y thin films hold promise for potential applications in Si-based spintronic devices operating at room temperature.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
