Abstract
(Zn1-xMnx)O diluted magnetic semiconductors (DMSs) grown on (0001) Al2O3 substrates by radio frequency magnetron sputtering were investigated with the aim of producing a material with a high ferromagnetic transition temperature (Tc). X-ray diffraction, photoluminescence, and Hall-effect measurements showed that the grown (Zn1-xMnx)O thin films were p-type crystalline semiconductors with single phases. Magnetization curve as a function of magnetic field at 5 K indicated that ferromagnetism existed in the (Zn1-xMnx)O thin films, and magnetization curve as a function of temperature showed that the Tc of the (Zn0.93Mn0.07)O thin film was 70 K. These observations can improve the understanding of the increase in Tc for (Zn1-xMnx)O DMSs grown on (0001) Al2O3 substrates.
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