Magnetic properties of Hf(P, Se)2 single crystal by high-temperature solution method using CdSe flux

Abstract

By the high pressure and high temperature solution method mixing CdSe fluxes, layered PbFCl-type HfP2-x Se x (x = 0.45) and HfSiSe single crystals were successfully grown and obtained under a high-pressure for the first time. It was clarified that the melting temperature of the solid solution was lowered by adding a small amount of CdSe. Typical sizes of ~ 180 × ~ 180 × ~ 20 μm 3 for HfP2-x Se x (x = 0.45) and ~ 120 × ~ 100 × ~ 20 μm 3 for HfSiSe were obtained and characterized by scanning electron microscopy (SEM) and energy-dispersive electron spectroscopy. X-ray diffraction analysis showed that HfP2-x Se x (x = 0.45) and HfSiSe were grown oriented c - axis. Magnetic susceptibility versus temperature measurement were performed for HfP2-x Se x (x = 0.45). Onset of the Tc was showed at around ~ 5.36 K for HfP2-x Se x (x = 0.45) single crystal. Here, the crystal growth and magnetic properties for HfP2-x Se x (x = 0.45) single crystal were presented.