Abstract
Room temperature (RT) pulsed operation of blue (402–427 nm) InGaN multi-quantum well (MQW) structure laser diodes (LDs) grown on bulk GaN crystals have been demonstrated. Substrate crystals were grown with the high nitrogen pressure and high temperature solution method. After substrate preparation the laser structures were grown by the low pressure MOVPE process. The LD structures are fully strained on the whole area of GaN crystals, without mismatch-related defects, being confirmed by X-ray diffraction, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Stripe geometry cavity has a contact area of 10 × 500 μm2. The mirror facets were cleaved and coated with reflection dielectric layers.
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