Magnetic properties of GaAs parabolic quantum dot in the presence of donor impurity under the influence of external tilted electric and magnetic fields

Mohammad K Elsaid,Ayham Shaer,Amal Abu Alia

doi:10.1080/16583655.2019.1622242

Mohammad K Elsaid, Ayham Shaer + Show 1 more

Open Access

https://doi.org/10.1080/16583655.2019.1622242

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Abstract

The dependence of the magnetization and magnetic susceptibility of donor impurity in parabolic GaAs (Gallium Arsenide) quantum dot has been investigated, at finite temperature under the influence of external tilted electric and magnetic fields. Based on the effective mass approximation, the Hamiltonian of an electron confined in a parabolic quantum dot in the presence of donor impurity which is presented in electric and magnetic fields has been solved by employing the numerical diagonalization method of the Hamiltonian matrix. All the energy matrix elements have been obtained in analytical form. We have shown the variations of the statistical energy and binding energy of donor impurity with the electric and magnetic field strengths and tilt electric field angle. The computed results show that the electrical field can tune the magnetic properties of the QD GaAs medium by flipping the sign of its magnetic susceptibility from diamagnetic (χ < 0) to paramagnetic (χ > 0).

Highlights

The recent technological development in the fabrication of low dimensional semiconductors opens new windows for researchers to investigate their properties [1,2,3,4,5,6,7,8,9]
Based on the effective mass approximation, the Hamiltonian of an electron confined in a parabolic quantum dot in the presence of donor impurity which is presented in electric and magnetic fields has been solved by employing the numerical diagonalization method of the Hamiltonian matrix
The Hamiltonian of an electron confined in a quantum dot in the presence of donor impurity under the influence of electric and magnetic fields will be solved by using exact diagonalization method

Summary

Introduction

The recent technological development in the fabrication of low dimensional semiconductors opens new windows for researchers to investigate their properties [1,2,3,4,5,6,7,8,9]. Many authors have studied the thermal and magnetic properties of electrons confined in quantum dots in the presence of external magnetic field. We investigate the influences of donor impurity on the magnetization and magnetic susceptibility of GaAs quantum dot under the effect of an external applied tilted electric and perpendicular magnetic fields. The Hamiltonian of an electron confined in a quantum dot in the presence of donor impurity under the influence of electric and magnetic fields will be solved by using exact diagonalization method. The rest of the paper is organized as follows: in Section 2, we present the Hamiltonian theory of a donor impurity in an external electric and magnetic fields, the calculation of the Hamiltonian energy matrix elements, the magnetization and susceptibility expressions.

Theory

Results and discussion

Conclusion