Magnetic Neutral Loop Discharge (NLD) Plasma and Application to SiO2 Etching Process

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The applicability of the magnetic neutral loop discharge (NLD) plasma etching apparatus to the 0.1 µm wafer process was experimentally verified. Variation of the SiO2 etch rate was obtained to within 1.3% (2% as 3σ value) on a 200 mm wafer, by applying a functional current to the magnetic coil with 0.1 Hz. A superfine trench pattern with a width of 20–50 nm and a depth of 800 nm was also successfully fabricated with an electron beam resist mask in a C4F8 + CH2F2 plasma at 0.3 Pa.