Abstract
The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR), from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among other subjects, the applications, the sensor design, the modelling and the electronic interfaces, focusing on electrical current sensing applications.
Highlights
Nowadays, due to the requirements of the novel applications, traditional magnetic field sensing methods are being revised and often substituted by emerging technologies [1].Focusing on solid state magnetic sensors, magnetodiodes, magnetotransistors, Hall effect devices and magnetoresistors must be considered
When dealing with electrical current sensors, we can directly incorporate the current strips into the integrated circuit during the microfabrication process
We will focus on the third option, where the magnetic field generated by a current flow is detected by a solid state magnetic sensor
Summary
Due to the requirements of the novel applications, traditional magnetic field sensing methods are being revised and often substituted by emerging technologies [1]. The basic principle of the magnetoresistance (MR) is the variation of the resistivity of a material or a structure as a function of an external magnetic field, as generally described by the following general equation:. The AMR effect is described as a change in the scattering due to the atomic orbitals, caused by a magnetic field This way, the resistance is at maximum when both directions are parallel and is at minimum when both directions are perpendicular. They demonstrated that the electric current in a magnetic multilayer consisting of a sequence of thin magnetic layers separated by thin non-magnetic metallic layers is strongly influenced by the relative orientation of the magnetizations of the magnetic layers (about 50% at 4.2 K) The cause of this giant variation of the resistance is attributed to the scattering of the electrons at the layers interfaces. Magnetization (a) multilayer (c) magnetic tunnel junction current direction (b) spin valve (d) granular alloy
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