Abstract
The magneto‐transport properties of a series of Bi2(TexSe1−x)3 films are investigated. It is seen that the doped samples develop an insulating behavior at low temperatures upon the increasing doping level as compared to the pristine sample Bi2Se3. The field evolution of the magneto‐resistance (MR) under perpendicular and parallel magnetic fields for Bi2(TexSe1−x)3 films with x = 0, 0.1, 0.24, 0.4, and 0.6 at temperatures from 2 to 200 K is investigated. A low field cusp behavior appears in MR data of Bi2(Te0.1Se0.9)3 film, which is associated with the weak anti‐localization (WAL). In Bi2(Te0.4Se0.6)3 films, MR with perpendicular and parallel magnetic fields shows signatures of WAL at low magnetic fields. A remarkable negative behavior, similar to weak localization (WL), under a high magnetic field parallel to the film surface is found which is dominated by bulk‐state electrons. MR of Bi2(Te0.6Se0.4)3 film reveals a low‐field WAL behavior and a high‐field parabolic behavior, revealing a two‐dimensional magneto‐transport property.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
