Abstract
The effect of magnetic fields on trap-assisted tunneling in Hg0.78Cd0.22Te metal-insulator semiconductor capacitors has been investigated. Landau-level formation in the two-dimensional electron gas inversion layer has been observed in high-frequency capacitance–voltage measurements in normal and tilted magnetic fields. With the magnetic field normal to the interface, shifts in the gate voltage position of the trap-assisted tunneling structure in capacitance and conductance–voltage data are observed consistent with the magnetic field induced shift in subband energies and Landau-level formation. With the magnetic field parallel to the inversion layer plane, a large reduction in tunneling current and shifts in electric subband energies are observed. In tilted magnetic fields, additional structure is observed, indicative of tunneling into higher-order Landau levels.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
