Abstract
The combined influence of externally applied magnetic and non-resonant intense laser fields (ILF) on the electronic states of GaAs-based two-dimensional circular quantum rings is investigated. The behavior of the electron energy levels as a result of the variation in the strength of the external fields is studied. In particular, the effects of changing the polarization of the intense laser radiation on the conduction band potential profile and allowed energy levels are discussed in detail. The intraband transition energies and the dipole matrix elements are analyzed as functions of the applied magnetic field intensity for different combinations of the intense laser field and resonant probe laser radiation polarizations. The findings can be summarized as follows: i) the quantized energies steadily increase as functions of the magnetic field and ILF-effects, ii) the electric dipole matrix elements are larger for the case of circular non-resonant ILF-polarization and circular laser probe polarization with respect to the case of linear polarized radiation, and iii) the dipole matrix elements have oscillatory behavior due to the complex nature of the wave functions which stems from the imaginary term appearing in the Hamiltonian when magnetic field effects are included.
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