Abstract
The excitation and emission spectra of red photoluminescence of Si wire nanostructures were studied in dependence on surface morphology and influence of magnetic field. The magnetic field of 0.5 T reduced the emission intensity by 10% at all emission spectral range. Comparison of the two photoluminescence models – the quantum confinement and the hot carrier ballistic ones – favours the second model based on the assumption of the excitation of interface oxide defect related luminescence by hot quazi-ballistic carriers created by illumination. The effective mobility of hot electrons is estimated as 6000 cm2/Vs, which greatly exceeds normal electron mobility (1900 cm2/Vs) in Si and thus confirms the presence of hot carrier ballistic motion. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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